PBlaze6 6630 Series advanced enterprise SSD optimized for PCIe4.0 server that delivers a massive 150% improvement in energy efficiency over the previous generation PCIe 3.0 PBlaze5 920, dramatically reducing power consumption of data center. PBlaze6 6630 Series offers capacity from 1.6TB to 7.68TB, all capacities come in 2.5-inch U.2 form factor.
PBlaze6 6630 series supports dual-port and allows access via two ports simultaneously, which solves the single-path failure, ensures continuous data access andmeets enterprise high availability requirement. Suitable for multi-path highly available storage system architecture and all-flash arrays. With no impact on enterprise business-critical continuity, minimising QoS impact.
PBlaze6 6630 series enables newly-upgraded MemSpeed4.0 technology set, achieving ultra-long write endurance. As per JESD219 standard, PBlaze6 6630 write endurance can be up to 1.7 DWPD (5 years), PBlaze6 6536 endurance can be up to 3.5 DWPD (5 years).
The PBlaze6 6630 series has a built-in optimised IO scheduling mechanism that ensures QoS and performance consistency of IO access, guaranteeing the high and consistent performance required by enterprise-class applications. PBlaze6 6530 series combined performance of the dual-port PBlaze6 6630 series is essentially equivalent to that of the single-port PBlaze6 6530 series, meeting the high-performance requirements of enterpriselevel users.
Compared to the previous generation PBlaze5 series, the PBlaze6 6630 series support richer enterprise features: Firmware Upgrade Without Reset, Telemetry, Persistent Event Log, Latency Statistics & High Latency Logging, NVMe-MI for Out-of- Band Management, Trim etc. to meet different business needs.
|PBlaze6 6630 Series ||D6630||D6636|
|User Capacity (TB)||1.92||3.84||7.68||1.6||3.2||6.4|
|Interface||PCIe 4.0 2 x 2, Dual Port|
|Form Factor||2.5-inch U.2|
|128KB Sequential Read(GB/s)||6.5||6.8||6.4||6.5||6.8||6.4|
|128KB Sequential Write(GB/s)||2.7||4.6||4.6||2.7||4.6||4.6|
|Sustained Random Read(4KB) IOPS||920K||1200K||1120K||920K||1200K||1120K|
|Sustained Random Write
(4KB) IOPS (Steady State) 
|Lifetime Endurance DWPD ||1.5||1.5||1.7||3.3||3.3||3.5|
|Latency Read/Write (μs)||71 / 9|
|Operating Temperature||Ambient: 0°C to 35°C with suggested airflow; Case: 0°C to 70°C|
|Uncorrectable Bit Error Rate||< 10-17|
|Mean Time Between Failures||2 million hours|
|NAND Flash Memory||3D TLC NAND|
|Operation System||RHEL, SLES, CentOS, Ubuntu, Windows Server, VMware ESXi|
|Power Consumption||< 14 W|
|Basic Feature Support||Power Failure Protection, Full Data Path Protection, S.M.A.R.T, Flexible Power Management,Hot Pluggable|
|Advanced Feature Support||Dual Port, TRIM, Multi-namespace, EUI64/NGUID, AES 256 Data Encryption & Crypto Erase, Firmware Upgrade without Reset, Timestamp, Weighted Round Robin, Variable Sector Size Management & NVMe End-to-End Data Protection(DIF/DIX), Latency Statistics & High Latency Logging, Telemetry, Sanitize, Persistent Event Log|
|Software Support||Open-source management tool, CLI debug tool, OS in-box driver (Easy system integration)|
.Performance may vary due to different system configurations and firmware version.
.Measurement is performed at Steady State.
.DWPD, Drive Writes per Day for 5 years.
.Average latency measured with 4KB random I/O pattern.